Non-volatile random access memory having non-inverted storage

Details Non-volatile random access memory having non-inverted storage Non-volatile random access memory having non-inverted storage

1980-10-27

1982-09-07

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, G11C 1140, G11C 1300

Patent

active

043487459

ABSTRACT:
A non-volatile random access memory cell has two branches, each branch comprising a source-to-drain channel and a series load connected to the channel to define a node therebetween, each channel having an associated electron tunneling region, a floating gate overlying the channel and a control gate overlying the floating gate, the control gate of each of the branches connected to the node of the other branch and the floating gate of each of the branches overlying the electron tunneling region of the source-to-drain channel of the other branch. The resulting structure is a cross-coupled floating gate structure in which threshold voltage control of one floating gate tunneling metal oxide semiconductor (FATMOS) transistor is controlled by another FATMOS transistor, the two transistors comprising a single random access memory cell. Data may be written in either volatile or non-volatile mode in a state which is not inverted from that previously stored during volatile writing.

REFERENCES:
patent: 4262340 (1981-04-01), Sasaki et al.

Affiliated with

Also associated with

Rating

Non-volatile random access memory having non-inverted storage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile random access memory having non-inverted storage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile random access memory having non-inverted storage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1345618