Non-volatile random access memory having a high load device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365149, 257295, G11C 1122

Patent

active

054146534

ABSTRACT:
A non-volatile random access memory comprising a plurality of unit cells each of which includes; a transistor composed of source/drain and gate electrodes, a ferroelectric capacitor connected to either of the source/drain electrodes and a high load device connected to both of the ferroelectric capacitor and the source/drain electrodes being connected to the ferroelectric capacitor.

REFERENCES:
patent: 5070385 (1991-12-01), Evans, Jr. et al.
patent: 5121353 (1992-06-01), Natori

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