Non-volatile random access memory cell with CMOS transistors hav

Details Non-volatile random access memory cell with CMOS transistors hav Non-volatile random access memory cell with CMOS transistors hav

1984-03-29

1986-06-17

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365182, 365202, G11C 1140

Patent

active

045959994

ABSTRACT:
The invention relates to a non-volatile static memory cell.
The cell comprises a bistable flip-flop with four transistors, with two complementary outputs. Between the outputs is placed a non-volatile storage element comprising two complementary transistors in series, namely a p channel transistor and a n channel transistor, said transistors having a common floating grid and a common control grid. A charge injection zone is provided on the side of the source region on the n channel transistor. The region is connected to an output of the flip-flop, while the control grid is connected to the other output.
Repositioning takes place without any reversal of the original state of the flip-flop.

REFERENCES:
patent: 4193128 (1980-03-01), Brewer
patent: 4300212 (1981-11-01), Simko
IBM Technical Disclosure Bulletin, vol. 24, No. 5 (Oct. 1981), H. H. Chao, Static Ram with Nonvolatile Backup Memory," pp. 2456-2457.

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