Non-volatile random access memory cell constructed of silicon ca

Details Non-volatile random access memory cell constructed of silicon ca Non-volatile random access memory cell constructed of silicon ca

1993-10-18

1996-04-23

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257296, 257306, 257402, H01L 2904, H01L 2948

Patent

active

055106307

ABSTRACT:
A non-volatile random access memory (NVRAM) cell that utilizes a simple, single-transistor DRAM cell configuration. The present NVRAM employs an enhancement mode nMOS transistor made as an accumulation mode transistor. The transistor has an n-type silicon carbide channel layer on a p-type silicon carbide buffer layer, with the channel and buffer layers being on a highly resistive silicon carbide substrate. The transistor also has n+ source and drain contact regions on the channel layer. A polysilicon/oxide/metal capacitor is preferably used which has a very low leakage current. Furthermore, this type of capacitor can be stacked on top of the transistor to save area and achieve high cell density. It is preferred to use a non-reentrant (edgeless) gate transistor structure to further reduce edge effects.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 4185319 (1980-01-01), Stewart
patent: 4402126 (1983-09-01), Chapman
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4791611 (1988-12-01), Eldin et al.
patent: 4875083 (1989-10-01), Palmour
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 4918498 (1990-04-01), Plus et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5124779 (1992-06-01), Farakawa et al.
patent: 5177572 (1993-01-01), Murakami
patent: 5216264 (1993-06-01), Fujii et al.
"The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications" by R. Trew, J. B. Yan, P. Mock, Proceedings of the IEEE, vol. 79, No. 5, May 1991.
"Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide" by R. Davis, G. Kelner, M. Shur, J. Palmour, J. Edmond, Proceedings of the IEEE, vol. 79, No. 5, May 1991.

Affiliated with

Also associated with

Rating

Non-volatile random access memory cell constructed of silicon ca does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile random access memory cell constructed of silicon ca, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile random access memory cell constructed of silicon ca will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2310846