Non-volatile random access memory and fabrication method thereof

Details Non-volatile random access memory and fabrication method thereof Non-volatile random access memory and fabrication method thereof

1995-12-06

1997-06-10

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, G11C 1122, H01L 2978

Patent

active

056383193

ABSTRACT:
A non-volatile random access memory comprises an MOS transistor having a gate insulation film formed on a semiconductor substrate, a gate electrode formed on the gate insulation film, and a pair of diffusion layers formed in the semiconductor substrate; and a ferroelectric capacitor having a bottom electrode connected to one of the diffusion layers of the MOS transistor, a capacitor ferroelectric film formed only on the bottom electrode, and a top electrode formed on the capacitor ferroelectric film; wherein at least side walls of the bottom electrode and the capacitor ferroelectric film are coated with lamination of a diffusion prevention film and a thin insulation film; an upper surface of the capacitor ferroelectric film is contacted with the top electrode; the other diffusion layer of the MOS transistor is connected to a bit line; the gate electrode is connected to a word line; and the top electrode of the ferroelectric capacitor is constituted so as to serve as a drive line.

REFERENCES:
patent: 5119154 (1992-06-01), Gnadinger
patent: 5212620 (1993-05-01), Evans et al.
patent: 5227855 (1993-07-01), Momose
patent: 5293510 (1994-03-01), Takenaka
patent: 5369296 (1994-11-01), Kato
patent: 5371700 (1994-12-01), Hamada
patent: 5481490 (1996-01-01), Watanabe
"International Electron Devices Meeting 1994", Table of Contents, and A Half-Micron Ferroelectric Memory Cell Technology with Stacked Capacitor Structure ONISHI et al, pp. 843-846.

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