Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1989-06-02
1991-11-12
Gossage, Glenn
Static information storage and retrieval
Systems using particular element
Flip-flop
365189, 365226, 365228, G11C 1400, G11C 1141
Patent
active
050653628
ABSTRACT:
A non-volatile random access memory (NVRAM) cell of condensed size employs a pair of programmable threshold voltage devices, e.g. MNOS (metal nitride oxide semiconductor), SNOS (silicon nitride oxide semiconductor), SONOS (silicon oxide-nitride-oxide semiconductor) or floating gate transistors, in which different threshold voltage levels are established in accordance with the data signal levels existing on the data nodes of a flip flop, when the volatile data is stored in the programmable devices. During recall of the non-volatile stored data to the data nodes of the flip flop, the programmable devices actively conduct current to the data nodes to set the flip flop in the same state that existed when the data was stored. Power is supplied to the flip flop independently of the power supplied to the programmable devices. A single polysilicon conductor forms gates of transistors which connect the programmable devices to the data nodes and the gates of the flip flop transistors. A load device for each data node is integrated in the single polysilicon conductor. A dynamic program inhibit capability is achieved in each programmable device during the store operation, by applying a series of programming signal pulses.
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Dimmler Klaus J.
Herdt Christian E.
Kamp David A.
Weiner Albert S.
Gossage Glenn
Ley John R.
Simtek Corporation
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