Non-volatile RAM cell with enhanced conduction insulators

Details Non-volatile RAM cell with enhanced conduction insulators Non-volatile RAM cell with enhanced conduction insulators

1980-09-30

1983-06-14

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 23, 365185, G11C 1140

Patent

active

043887040

ABSTRACT:
This invention provides improved non-volatile semiconductor memories which include a volatile circuit coupled to a non-volatile device having a floating gate and first and second control gates capacitively coupled to the floating gate with a charge injector structure disposed between the floating gate and one of the two control gates. The volatile circuit may be a dynamic one-device cell or a static cell such as a conventional flip-flop or latch cell.

REFERENCES:
patent: 3651492 (1972-03-01), Lockwood
patent: 3676717 (1972-07-01), Lockwood
patent: 3728695 (1973-04-01), Bentchkowsky
patent: 4095281 (1978-06-01), Denes
patent: 4103185 (1978-07-01), Denes
patent: 4103348 (1978-07-01), Fagan
patent: 4122541 (1978-10-01), Uchida
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4175290 (1979-11-01), Harari
patent: 4207615 (1980-06-01), Mar
patent: 4217601 (1980-08-01), De Keersmaecker et al.
patent: 4330850 (1982-05-01), Jacobs et al.
"High Current Injection into SiO.sub.2 from Si Rich SiO.sub.2 Films and Experimental Applications", by D. J. DiMaria et al., J. Appl. Pys. 51(5), May 1980, pp. 2722-2735.
"Electrically-Alterable Memory Using A Dual Electron Injector Structure", by D. J. DiMaria et al., IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980, pp. 179-181.

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