Static information storage and retrieval – Systems using particular element – Magnetic thin film
Patent
1987-05-29
1989-12-12
Moffitt, James W.
Static information storage and retrieval
Systems using particular element
Magnetic thin film
365154, 365171, G11C 1140, G11C 1110
Patent
active
048872369
ABSTRACT:
A random-access memory having a plurality of memory cells each cell including a magnetic storage element in which the magnetic storage element inlcudes a thin film of magnetic material disposed on a semiconductor substrate and having further disposed thereon transistors connected in a flip-flop type of configuration. In a preferred embodiment of the invention, the magnetic storage element comprises a thin magnetic film that has mutually orthogonal remanent magnetization states used for information storage. A pair of strip conductors used to provide connections to the flip-flop configuration of the transducers are magnetically coupled to the mutually orthogonal remanent magnetization states. By providing the thin film having a pair of mutually orthogonal remanent states used for information storage, a storage cell having a relatively high frequency response is provided.
REFERENCES:
patent: 3418646 (1968-12-01), Marcus
patent: 3466632 (1969-09-01), Wang
patent: 3573485 (1971-04-01), Ballard
"Technology of Ion Beam Sources used in Sputtering" by Harold R. Kaufman, J. Vac. Sci. Technol. 15(2), American Vacuum Society, Mar./Apr. 1978, pp. 272-276.
"Interface Chemistry of Metal-GaAs Schottky-Barrier Contacts" by J. R. Waldrop et al, Appl. Phys. Lett. 34(10), American Institute of Physics, May 1979, pp. 630-632.
"Magnetoresistance Effect of Ni-Fe Film Formed by Ion Beam Sputtering", by Yasuhiro Nagai et al, J. Vac. Sci. Technol., A 4(5), American Vacuum Society, Sep./ Oct. 1986, pp. 2364-2368.
"Properties of Fe Single-Crystal Films Grown on (100) GaAs by Molecular-Beam Epitaxy", by J. Kdebs et al, J. Appl. Phys. 61(7), 1 Apr. 1987, pp. 2596-2599.
"Iron Thin Films by Means of Dual Ion-Beam Sputtering" by M. Yamaga et al, IEEE Translation Journal on Magnetics in Japan, vol. TJMJ-1, No. 4, Jul. 1985, pp. 488-190.
"X-ray Characterization of Single-Crystal Fe Films on GaAs Grown by Molecular Beam Epitaxy", by S. B. Oadri et al, J. Vac, Sci. Technol. B, vol. 3, No. 2, Mar./Apr. 1985, pp. 719-721.
"Molecular Beam Epitaxial Growth of Single-Crystal Fe Films on GaAs", by G. A. Prinz et al, App. Phys. Lett. 39(5), 1 Sep., 1981, pp. 397-399.
"Single Crystal Fe Films Grown on GaAs Substrates" by W. Wettling et al, Journal of Magnetism and Magnetic Materials, 28 (1982) pp. 299-304.
Moffitt James W.
Moloney Denis G.
Raytheon Company
Sharkansky Richard M.
LandOfFree
Non-volatile, radiation-hard, random-access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile, radiation-hard, random-access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile, radiation-hard, random-access memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2126527