Non-volatile, programmable, static memory cell

Details Non-volatile, programmable, static memory cell Non-volatile, programmable, static memory cell

1985-12-09

1987-11-17

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365185, 365228, G11C 1100

Patent

active

047078073

ABSTRACT:
A memory and a non-volatile, programmable, static memory cell in which a programmable transistor and a capacitance are added to a known static memory cell. The cross-wise couplings between the transistors of the static cell form a first and a second junction. The gate and a main electrode (drain) of the programmable transistor are connected to the first junction. The second junction is connected to an injection location opposite the floating gate of the programmable transistor whose channel is connected in series with the capacitance the other side of which is connected to the sources of the two transistors of the static cell.

REFERENCES:
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4342101 (1982-07-01), Edwards
patent: 4388704 (1983-06-01), Bertin et al.
patent: 4420821 (1983-12-01), Hoffman
Klein et al., "5v Only Nonvolatile RAM Owes It All To Polysilicon", Electronics, Oct. 11, 1979, pp. 111-116.

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