Non-volatile programmable memory cell and array for...

Details Non-volatile programmable memory cell and array for... Non-volatile programmable memory cell and array for...

2008-03-25

2010-11-23

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

07838944

ABSTRACT:
A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor of a first conductivity type in series with a volatile MOS transistor of a second conductivity type. The non-volatile MOS transistor may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor, or a nano-crystal transistor. A volatile MOS transistor, an inverter, or a buffer may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor and the volatile MOS transistor.

REFERENCES:
patent: 5510730 (1996-04-01), El Gamal et al.
patent: 5517045 (1996-05-01), Ho et al.
patent: 5587603 (1996-12-01), Kowshik
patent: 5625211 (1997-04-01), Kowshik
patent: 5640344 (1997-06-01), Pani et al.
patent: 5740106 (1998-04-01), Nazarian
patent: 5847993 (1998-12-01), Dejenfelt
patent: 6144580 (2000-11-01), Murray
patent: 6356478 (2002-03-01), McCollum
patent: 6413819 (2002-07-01), Zafar et al.
patent: 7368789 (2008-05-01), Dhaoui et al.
patent: 2004/0183126 (2004-09-01), Bae et al.
Copending U.S. Appl. No. 11/152,019, filed Jun. 13, 2005 entitled “Isolated-Nitride-Region Non-Volatile Memory Cell and Fabrication Method.”

Affiliated with

Also associated with

Rating

Non-volatile programmable memory cell and array for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile programmable memory cell and array for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile programmable memory cell and array for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4252467