Non-volatile programmable memory cell and array for...

Details Non-volatile programmable memory cell and array for... Non-volatile programmable memory cell and array for...

2008-05-06

2008-05-06

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

07368789

ABSTRACT:
A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor of a first conductivity type in series with a volatile MOS transistor of a second conductivity type. The non-volatile MOS transistor may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor, or a nano-crystal transistor. A volatile MOS transistor, an inverter, or a buffer may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor and the volatile MOS transistor.

REFERENCES:
patent: 5640344 (1997-06-01), Pani et al.
patent: 5740106 (1998-04-01), Nazarian
patent: 5847993 (1998-12-01), Dejenfelt
patent: 6144580 (2000-11-01), Murray
patent: 6356478 (2002-03-01), McCollum

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