Non-volatile multistate memory cell using a ferroelectric gate f

Details Non-volatile multistate memory cell using a ferroelectric gate f Non-volatile multistate memory cell using a ferroelectric gate f

1997-12-05

2000-07-18

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, 365117, G11C 1122

Patent

active

060916214

ABSTRACT:
A multi-state non-volatile ferroelectric memory includes a field effect transistor having a gate insulator formed of ferroelectric material. The ferroelectric material is separated into regions of different characteristics, e.g. different thicknesses, different coercive field values, etc., so as to provide a plurality of different threshold voltages for the field effect transistor.

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