Non-volatile MEMS memory cell and method of forming such...

Details Non-volatile MEMS memory cell and method of forming such... Non-volatile MEMS memory cell and method of forming such...

2007-06-26

2009-12-01

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S213000, C257S418000

Reexamination Certificate

active

07626237

ABSTRACT:
A memory cell for storing a bit having one of two logic states. The memory cell includes a structure comprises a pair of electrically conductive shape memory alloy members separated by a dielectric. An electrical circuit applies a current pulse at a first time to the first electrically conductive member to place the structure is a first position corresponding to one of the two logic states and for applying a current pulse at a different time to change the position of the structure from the first position to a different position, such different position corresponding to a different one of the two logic states. Output circuitry is provided for detecting the logic state of the bit stored by the memory cell, such output circuitry comprising a position sensor for detecting whether the structure is in the first position or in the second position.

REFERENCES:
patent: 5619177 (1997-04-01), Johnson et al.
patent: 6473361 (2002-10-01), Chen et al.
patent: 6611033 (2003-08-01), Hsu et al.

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