Non-volatile memory

Static information storage and retrieval – Magnetic bubbles – Guide structure

Patent

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Details

357 41, 357 55, 365182, 365185, H01L 2968, H01L 2900, H01L, G11C 1134

Patent

active

050087223

ABSTRACT:
A cross point EPROM array has trenches to provide improved isolation between adjacent buried N+ bitlines at locations where the adjacent buried N+ bitlines are not separated by a FAMOS transistor. This results in improved leakage current, improved punchthrough voltage characteristics, and in improved programmability for the cell.

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patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4612629 (1986-09-01), Harari
patent: 4622737 (1986-11-01), Ravaglia
patent: 4688078 (1987-08-01), Hseih
patent: 4729006 (1988-03-01), Dally et al.

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