Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-07-24
2007-07-24
Tran, Michael (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S200000
Reexamination Certificate
active
11287417
ABSTRACT:
A non-volatile memory device has an array of memory cells arranged in rows and columns. The memory cells can be externally accessed for programming, erasing and reading operations. Test rows of memory cells are provided in the array to allow for memory cell disturb conditions. The test rows are not externally accessible for standard program and read operations. The test rows are located near bit line driver circuitry to insure the highest exposure to bit line voltages that may disturb memory cells in the array.
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Leffert Jay & Polglaze PA
Tran Michael
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