Non-volatile memory with functional capability of...

Electrical computers and digital data processing systems: input/ – Input/output data processing – Input/output command process

Reexamination Certificate

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C710S003000, C710S005000, C710S014000, C710S020000, C710S021000, C710S035000, C710S036000, C710S053000, C711S150000, C711S168000, C711S005000, C365S189040, C365S230030

Reexamination Certificate

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06912598

ABSTRACT:
An electrically alterable semiconductor memory comprises at least two substantially independent memory banks, and a first control circuit for controlling operations of electrical alteration of the content of the memory. The first control circuit permits the selective execution of an operation of electrical alteration of the content of one of the at least two memory banks. The memory also comprises second control circuit that permits, simultaneously with said operation of electrical alteration of the content of one of the at least two memory banks, a burst mode, page mode, or standard read operation for reading the content of the other memory bank.

REFERENCES:
patent: 5263003 (1993-11-01), Cowles et al.
patent: 5371877 (1994-12-01), Drako et al.
patent: 5847998 (1998-12-01), Van Buskirk
patent: 5867430 (1999-02-01), Chen et al.
patent: 6178129 (2001-01-01), Chen
patent: 09106669 (1997-04-01), None
patent: WO 99/35650 (1999-07-01), None

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