Non-volatile memory with asymmetrical doping profile

Details Non-volatile memory with asymmetrical doping profile Non-volatile memory with asymmetrical doping profile

2007-11-13

2007-11-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE29279

Reexamination Certificate

active

10952689

ABSTRACT:
Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.

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