Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-02-15
2005-02-15
Mai, Son (Department: 2818)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S163000
Reexamination Certificate
active
06856536
ABSTRACT:
Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer that changes its resistive state between a low resistive state and a high resistive state upon application of a voltage pulse is formed above the substrate, generally at a very high temperature. While the layers fabricated between the substrate and the multi-resistive state material use materials that can withstand high temperature processing, the layers fabricated above the multi-resistive state material do not need to withstand high temperature processing.
REFERENCES:
patent: 5946227 (1999-08-01), Naji
patent: 6055178 (2000-04-01), Naji
patent: 6097625 (2000-08-01), Scheuerlein
patent: 6111781 (2000-08-01), Naji
patent: 6178131 (2001-01-01), Ishikawa et al.
patent: 6191972 (2001-02-01), Miura et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6478106 (2002-11-01), Hawener et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6731528 (2004-05-01), Hush et al.
Liu, S.Q., et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
Liu, S.Q., et al., “A New Concept For Non-Volatile Memory: Electric-Pulse Induced Reversible Resistance Change Effect in Magnetoresistive Films”, Space Vacuum Epitaxy Center, University of Huston, Huston TX, 7 Pages.
Beck, A. et al., “Reproducible switching effect in thin oxide films for memory applications”, Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000,139-141.
Rossel, C. et al., “Electrical current distribution across a metal-insulator-metal structure during bistable switching”, Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, 2892-2898.
Watanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals”, Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740.
Chevallier Christophe J.
Rinerson Darrell
Mai Son
Malino Morgan
Unity Semiconductor Corporation
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