Non-volatile memory using organic bistable device

Details Non-volatile memory using organic bistable device Non-volatile memory using organic bistable device

2007-01-30

2007-01-30

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S164000

Reexamination Certificate

active

10871754

ABSTRACT:
The present invention provides an organic bistable device for use in non-volatile memories. The organic bistable device comprises a first and a second metal electrode sandwiching a first and a second organic layer with a metal-nanocluster layer positioned between the first and second organic layers. The device further comprises a first electron blocking layer positioned between the metal-nanocluster layer and one of the metal electrodes. This structure provides an organic bistable device with improved charge retention characteristics.

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Presentation by Liping Ma, et al. “High Performance Organic Nonvolatile Memory Device”, available at http://klabs.org/richcontent/MemoryContent
vmt—symp
vmts—2002/docs/09/09—ma—s.pdf (visited Jun. 8, 2004).
Liping Ma, et al. “Nonvolatile electrical bistability of organic/metal-nanocluster/organic system”, Applied Physics Letters, vol. 82(9), pp. 1419-1421, Mar. 3, 2003.
Y. N. Hwang, et al. “Writing Current Reduction for High-Density Phase Change RAM”, IEDM Technical Digest (2003).

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