Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-07-01
2010-12-07
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185090
Reexamination Certificate
active
07848155
ABSTRACT:
Methods of operating non-volatile memory devices can compensate for threshold voltage disturbances caused by overhead data programming during block erase operations. These methods include erasing a spare array of nonvolatile memory cells and a corresponding main array of nonvolatile memory cells that shares word lines with the spare array. This erasing operation is followed by writing updated overhead data (e.g., an erase count) into the spare array and then performing a soft program operation. This soft program operation is performed on at least a first portion of the main array to thereby narrow a threshold voltage distribution of erased memory cells within the first portion of the main array. The soft program operation is then followed by an operation to verify an erased status of at least the first portion of the main array and an operation to communicate that the main and spare arrays of nonvolatile memory cells have been properly erased to a memory controller.
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Kim Doo Gon
Lee Yeong Taek
Park Ki Tae
Myers Bigel & Sibley & Sajovec
Phung Anh
Samsung Electronics Co,. Ltd.
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