Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-10-13
1995-10-10
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257360, 257529, H01L 2702
Patent
active
054573360
ABSTRACT:
An improved nonvolatile memory device is provided, in which the threshold voltage variations (V.sub.ts) and transconductance degradation are significantly reduced. The NVM includes protection structure for limiting the process induced damage incurred during the manufacturing process. The protection structure is utilized to provide reliable and stable dielectrical characteristics for the NVM device. The protection structure is easy to implement and will not affect the conventional NVM performance.
REFERENCES:
patent: 5315145 (1994-05-01), Lukaszek
Chang Chi
Fang Hao
Haddad Sameer
Advanced Micro Devices , Inc.
Limanek Robert P.
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