Non-volatile memory structure including protection and structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257356, 257360, 257529, H01L 2702

Patent

active

054573360

ABSTRACT:
An improved nonvolatile memory device is provided, in which the threshold voltage variations (V.sub.ts) and transconductance degradation are significantly reduced. The NVM includes protection structure for limiting the process induced damage incurred during the manufacturing process. The protection structure is utilized to provide reliable and stable dielectrical characteristics for the NVM device. The protection structure is easy to implement and will not affect the conventional NVM performance.

REFERENCES:
patent: 5315145 (1994-05-01), Lukaszek

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