Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-24
2008-06-24
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27103, C257SE21691, C257SE29301, C438S257000, C438S593000
Reexamination Certificate
active
07391073
ABSTRACT:
A method of fabricating a non-volatile memory is described. A substrate having a tunneling layer and a floating gate layer thereon is provided. A mask layer is formed on the floating gate. The mask layer has openings that expose a portion of the floating gate layer. Then, a portion of the floating gate layer is removed from the openings to form sunken regions on the surface of the floating gate layer. An inter-gate dielectric layer is formed on the floating gate layer. A control gate layer is formed on the inter-gate dielectric layer. After that, the mask layer and the floating gate layer under the mask layer are removed to form another opening. A select gate layer is formed inside the opening.
REFERENCES:
patent: 5610091 (1997-03-01), Cho
patent: 5932910 (1999-08-01), Hong
patent: 6146946 (2000-11-01), Wang et al.
patent: 6262452 (2001-07-01), Ono et al.
patent: 6288423 (2001-09-01), Sugaya
patent: 6335243 (2002-01-01), Choi et al.
patent: 6589842 (2003-07-01), Huang
patent: 2002/0187608 (2002-12-01), Tseng
patent: 2004/0232473 (2004-11-01), Hsu et al.
patent: 2006/0170028 (2006-08-01), Jeon et al.
patent: 2006/0275985 (2006-12-01), Chuang et al.
Chen Tsung-Lung
Hsu Cheng-Yuan
Hung Chih-Wei
Kuo Hui-Hung
Jianq Chyun IP Office
Powerchip Semiconductor Corp.
Thomas Toniae M.
Wilczewski M.
LandOfFree
Non-volatile memory structure and method of fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory structure and method of fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory structure and method of fabricating... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2815682