Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-03-29
2011-03-29
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S173000
Reexamination Certificate
active
07916515
ABSTRACT:
An apparatus and associated method for writing data to a non-volatile memory cell, such as a resistive random access memory (RRAM) cell. In some embodiments, a control circuitry is configured to write a logic state to a resistive sense element while simultaneously verifying the logic state of the resistive sense element.
REFERENCES:
patent: 7286394 (2007-10-01), Ooishi
patent: 7345912 (2008-03-01), Luo et al.
patent: 2004/0114444 (2004-06-01), Matsuoka
patent: 2006/0221752 (2006-10-01), Fasoli et al.
patent: 2008/0056023 (2008-03-01), Lee et al.
M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao and H. Kano, “A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM,” Proc. International Electron Device Meeting Tech. Digest, 2995, pp. 473-476, IEEE.
Chen Yiran
Li Hai
Liu Harry Hongyue
Wang Alan Xuguang
Fellers , Snider, et al.
Seagate Technology LLC
Tran Michael T
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