Non-volatile memory read/write verify

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S173000

Reexamination Certificate

active

07916515

ABSTRACT:
An apparatus and associated method for writing data to a non-volatile memory cell, such as a resistive random access memory (RRAM) cell. In some embodiments, a control circuitry is configured to write a logic state to a resistive sense element while simultaneously verifying the logic state of the resistive sense element.

REFERENCES:
patent: 7286394 (2007-10-01), Ooishi
patent: 7345912 (2008-03-01), Luo et al.
patent: 2004/0114444 (2004-06-01), Matsuoka
patent: 2006/0221752 (2006-10-01), Fasoli et al.
patent: 2008/0056023 (2008-03-01), Lee et al.
M. Hosomi, H. Yamagishi, T. Yamamoto, K. Bessho, Y. Higo, K. Yamane, H. Yamada, M. Shoji, H. Hachino, C. Fukumoto, H. Nagao and H. Kano, “A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM,” Proc. International Electron Device Meeting Tech. Digest, 2995, pp. 473-476, IEEE.

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