Non-volatile memory in integrated circuit form with fast reading

Details Non-volatile memory in integrated circuit form with fast reading Non-volatile memory in integrated circuit form with fast reading

1997-08-07

1999-08-31

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

36518903, 36518526, 365191, G11C 700

Patent

active

059462418

ABSTRACT:
The disclosure relates to the field of memories in integrated circuit form. It can be applied more particularly to the field of EPROM or EEPROM type electrically programmable non-volatile memories. A memory array and read circuits are proposed in order to improve the time taken to read a data element. During a reading operation a read circuit is connected firstly to an erased cell and secondly to a programmed cell. The memory outputs a 1 for a read operation that access a first memory cell having an erased state and a second memory cell having a programmed cell, and further, the memory outputs a 0 for a read operation that access a first memory cell having a programmed state and a second memory cell having an erased state.

REFERENCES:
patent: 5237534 (1993-08-01), Tanaka et al.
patent: 5537349 (1996-07-01), Devin
patent: 5544114 (1996-08-01), Gaultier et al.
patent: 5696716 (1997-12-01), Rolandi
patent: 5748536 (1998-05-01), Kwon et al.
patent: 5751635 (1998-05-01), Wong et al.
Search Report from French patent application No. 96 10176, filed Aug. 8, 1996.

Affiliated with

Also associated with

Rating

Non-volatile memory in integrated circuit form with fast reading does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory in integrated circuit form with fast reading, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory in integrated circuit form with fast reading will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427934