Static information storage and retrieval – Read/write circuit
Patent
1997-08-07
1999-08-31
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
36518903, 36518526, 365191, G11C 700
Patent
active
059462418
ABSTRACT:
The disclosure relates to the field of memories in integrated circuit form. It can be applied more particularly to the field of EPROM or EEPROM type electrically programmable non-volatile memories. A memory array and read circuits are proposed in order to improve the time taken to read a data element. During a reading operation a read circuit is connected firstly to an erased cell and secondly to a programmed cell. The memory outputs a 1 for a read operation that access a first memory cell having an erased state and a second memory cell having a programmed cell, and further, the memory outputs a 0 for a read operation that access a first memory cell having a programmed state and a second memory cell having an erased state.
REFERENCES:
patent: 5237534 (1993-08-01), Tanaka et al.
patent: 5537349 (1996-07-01), Devin
patent: 5544114 (1996-08-01), Gaultier et al.
patent: 5696716 (1997-12-01), Rolandi
patent: 5748536 (1998-05-01), Kwon et al.
patent: 5751635 (1998-05-01), Wong et al.
Search Report from French patent application No. 96 10176, filed Aug. 8, 1996.
Naura David
Zink Sebastien
Nguyen Viet Q.
SGS-Thomson Microelectronics S.A.
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