Non-volatile memory having three states and method for...

Details Non-volatile memory having three states and method for... Non-volatile memory having three states and method for...

2007-10-02

2007-10-02

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29272, C257SE29164

Reexamination Certificate

active

11121639

ABSTRACT:
Disclosed is a non-volatile memory having three data states and a method for manufacturing the same. The non-volatile memory includes a silicon substrate having a device separation film; a floating gate formed on the silicon substrate; a tunnel oxide film interposed between the silicon substrate and the floating gate below both ends of the floating gate; a ferroelectric substance interposed between the silicon substrate and the floating gate inside the tunnel oxide film; a diffusion barrier film enclosing the ferroelectric substance; a control gate formed on the substrate including the floating gate; a gate oxide film formed below the control gate; spacers formed on both lateral walls of the laminated floating gate and control gate including the tunnel oxide film and gate oxide film, respectively; and source/drain regions formed within the substrate surfaces on both sides of the control gate including the spacers, respectively.

REFERENCES:
patent: 2006/0054943 (2006-03-01), Li et al.

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