Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S319000, C257S320000, C257S321000, C257SE29129, C257SE29300, C257SE29178, C257SE21680
Reexamination Certificate
active
11172112
ABSTRACT:
In one embodiment, a semiconductor device comprises an insulated floating gate disposed on a semiconductor substrate, an insulated program gate formed at least on a side surface of the floating gate, and an insulated erase gate disposed adjacent the floating gate.
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Jan Van Houdt, et al. “A Low-Cost Poly-Sidewall Erase HIMOS™ Technology For 130-90nm Embedded Flash Memories” IMEC, Kapeldreef 75, B3001 Leuven, Belgium, 2 pages.
Marger & Johnson & McCollom, P.C.
Ngo Ngan V.
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