Non-volatile memory having multiple erase operations

Details Non-volatile memory having multiple erase operations Non-volatile memory having multiple erase operations

2007-12-24

2009-08-25

Nguyen, Than (Department: 2187)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C711S102000

Reexamination Certificate

active

07581058

ABSTRACT:
A non-volatile storage device (1) has non-volatile memory units (FARY0to FARY3), buffer units (BMRY0to BMRY3) and a control unit (CNT), and the control unit can control a first access processing between an outside and the buffer unit and a second access processing between the non-volatile memory unit and the buffer unit upon receipt of directives from the outside separately from each other. The control unit can independently carry out an access control over the non-volatile memory unit and the buffer unit in accordance with the directives sent from the outside, respectively. Therefore, it is possible to set up next write data to the buffer unit simultaneously with the erase operation of the non-volatile memory unit or to output once read storage information to the buffer unit at a high speed as in a cache memory operation in accordance with the directive sent from the outside. Consequently, it is possible to reduce the overhead of a data transfer for reading/writing data from/to the non-volatile storage device.

REFERENCES:
patent: 5297029 (1994-03-01), Nakai et al.
patent: 5422856 (1995-06-01), Sasaki et al.
patent: 6366977 (2002-04-01), Mizoguchi
patent: 6434658 (2002-08-01), Fukuzumi
patent: 6748482 (2004-06-01), Fackenthal
patent: 6920522 (2005-07-01), Roohparvar
patent: 7080193 (2006-07-01), Roohparvar
patent: 7149844 (2006-12-01), Bernardi et al.
patent: 7191308 (2007-03-01), Hara et al.
patent: 2004/0172499 (2004-09-01), Roohparvar
patent: 2004/0177216 (2004-09-01), Asari et al.
patent: 2005/0132129 (2005-06-01), Venkiteswaran
patent: 5-282882 (1993-10-01), None
patent: 6-259320 (1994-09-01), None
patent: 11-85609 (1999-03-01), None
patent: 11-149788 (1999-06-01), None
patent: 2001-325796 (2001-11-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory having multiple erase operations does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory having multiple erase operations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory having multiple erase operations will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4095231