Non-volatile memory for fast signals

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

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Details

365180, 365177, 307238, G11C 1140

Patent

active

041225430

ABSTRACT:
A memory for non-volatile recording, lasting a long time, of fast signals. It comprises two storage stages:
The first stage enables the input signal to be recorded by the production of depletion zones in a semiconductor;
The second stage is formed by an MIIS type element whose charge is controlled by the extent of the preceding depletion zone, and ensures long recording of the signal.

REFERENCES:
patent: 3729719 (1973-04-01), Weidmann

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