Non-volatile memory element and method of operation therefor

Details Non-volatile memory element and method of operation therefor Non-volatile memory element and method of operation therefor

2011-05-03

2011-05-03

Le, Vu A (Department: 2824)

Static information storage and retrieval

Read/write circuit

Optical

C365S234000

Reexamination Certificate

active

07936631

ABSTRACT:
A very small magnetic tunnel junction is formed on a semiconductor p-i-n diode. Spin-polarized current which is generated by circular polarized light or elliptically-polarized light, is injected into a free layer of the magnetic tunnel junction so that magnetization direction (two opposite directions) in the free layer is changed based on the information, whereby information is stored in the memory element.

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