Non-volatile memory devices including fuse covered field...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state

Reexamination Certificate

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C257SE21592

Reexamination Certificate

active

07666717

ABSTRACT:
A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.

REFERENCES:
patent: 6338992 (2002-01-01), Ahmed et al.
patent: 6531757 (2003-03-01), Shiratake
patent: 6617637 (2003-09-01), Hsu et al.
patent: 2000-269471 (2000-09-01), None
patent: 2001-0068736 (2001-07-01), None
Korean Office Action for Korean patent application No. 10-2003-0096767; dated Jul. 28, 2005.

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