Non-volatile memory devices including fuse covered field...

Details Non-volatile memory devices including fuse covered field... Non-volatile memory devices including fuse covered field...

2006-10-05

2010-02-23

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C257SE21592

Reexamination Certificate

active

07666717

ABSTRACT:
A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.

REFERENCES:
patent: 6338992 (2002-01-01), Ahmed et al.
patent: 6531757 (2003-03-01), Shiratake
patent: 6617637 (2003-09-01), Hsu et al.
patent: 2000-269471 (2000-09-01), None
patent: 2001-0068736 (2001-07-01), None
Korean Office Action for Korean patent application No. 10-2003-0096767; dated Jul. 28, 2005.

Affiliated with

Also associated with

Rating

Non-volatile memory devices including fuse covered field... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory devices including fuse covered field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory devices including fuse covered field... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4233977