Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-03-28
2011-10-25
Sofocleous, Alexander (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185020, C365S185200
Reexamination Certificate
active
08045383
ABSTRACT:
A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string on the active region. The first memory cell string may include a first plurality of word lines crossing the active region between a first ground select line and a first string select line, and about a same first spacing may be provided between adjacent ones of the first plurality of word lines. The second memory cell string may include a second plurality of word lines crossing the active region between a second ground select line and a second string select line, and about the same first spacing may be provided between adjacent ones of the second plurality of word lines. Moreover, the first ground select line may be between the second ground select line and the first plurality of word lines, and the second ground select line may be between the first ground select line and the second plurality of word lines. Moreover, portions of the active region between the first and second ground select lines may be free of word lines, and a second spacing between the first and second ground select lines may be at least about 3 times greater than the first spacing. Related methods are also discussed.
REFERENCES:
patent: 5397723 (1995-03-01), Shirota et al.
patent: 5729491 (1998-03-01), Kim et al.
patent: 6239008 (2001-05-01), Yu et al.
patent: 6495435 (2002-12-01), Templeton et al.
patent: 6707078 (2004-03-01), Shiraiwa et al.
patent: 6818480 (2004-11-01), Lee et al.
patent: 6833232 (2004-12-01), Park
patent: 6845042 (2005-01-01), Ichige et al.
patent: 7079437 (2006-07-01), Hazama et al.
patent: 7239556 (2007-07-01), Abe et al.
patent: 7310280 (2007-12-01), Park et al.
patent: 7440322 (2008-10-01), Kamei
patent: 2004/0113199 (2004-06-01), Hazama et al.
patent: 2004/0174732 (2004-09-01), Morimoto
patent: 2006/0023558 (2006-02-01), Cho et al.
patent: 2006/0139997 (2006-06-01), Park et al.
patent: 04-212472 (1992-08-01), None
patent: 1019930008855 (1993-09-01), None
patent: 950014540 (1995-12-01), None
patent: 950014540 (1995-12-01), None
patent: 1020040079328 (2004-09-01), None
patent: 1020050106280 (2005-11-01), None
patent: 1020060007177 (2006-01-01), None
Choi Jung-Dal
Park Jin-Taek
Park Young-Woo
Sel Jong-Sun
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Sofocleous Alexander
LandOfFree
Non-volatile memory devices including dummy word lines and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory devices including dummy word lines and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory devices including dummy word lines and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4256044