Non-volatile memory devices having cell diodes

Details Non-volatile memory devices having cell diodes Non-volatile memory devices having cell diodes

2007-07-25

2009-11-03

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C365S148000

Reexamination Certificate

active

07612360

ABSTRACT:
An integrated circuit memory cell includes a substrate having a first semiconductor region of first conductivity type (e.g., N-type) therein, which may define a portion of a word line within the substrate. An electrically insulating layer is provided on the substrate. The electrically insulating layer has an opening therein that extends opposite a recess in the first semiconductor region. A first insulating spacer is provided on a sidewall of the recess in the first semiconductor region. A diode is provided in the opening. The diode has a first terminal electrically coupled to a bottom of the recess in the first semiconductor region. A variable resistivity material region (e.g., phase-changeable material region) is also provided. The variable resistivity material region is electrically coupled to a second terminal of the diode.

REFERENCES:
patent: 6744088 (2004-06-01), Dennison
patent: 6912153 (2005-06-01), Tihanyi
patent: 2004/0036103 (2004-02-01), Chen et al.
patent: 1020060001060 (2006-01-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory devices having cell diodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory devices having cell diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory devices having cell diodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4072814