Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-12-11
2009-10-13
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185290
Reexamination Certificate
active
07602643
ABSTRACT:
The data read method for a non-volatile memory device includes a multi-sector erase operation and a Read While Write (RWW) operation. In the multi-sector erase operation, a plurality of sectors, which are to be erased, are sequentially erased. In the RWW operation, if a read command instructing reading of a sector that is to be read is received while the multi-sector erase operation is being performed, data of the sector that is to be read is read. In the RWW operation, data of a sector that is to be read belonging to a bank including an erased sector, from which data is already erased, is read. Related memory devices are also disclosed.
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Korean Office Action, KR 10-2006-0108379, Dec. 12, 2007.
Hidalgo Fernando N
Ho Hoai V
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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