Non-volatile memory devices and programming methods thereof...

Details Non-volatile memory devices and programming methods thereof... Non-volatile memory devices and programming methods thereof...

2008-03-27

2010-02-23

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185260

Reexamination Certificate

active

07668016

ABSTRACT:
Non-volatile memory devices and methods of programming a non-volatile memory device in which electrons are moved between charge trap layers through a pad oxide layer are provided. The non-volatile memory devices include a charge trap layer on a semiconductor substrate and storing electrons, a pad oxide layer on the first charge trap layer, and a second trap layer on the pad oxide layer and storing electrons. In a programming mode in which data is written, the stored electrons are moved between a first position of the first charge trap layer and a first position of the second charge trap layer through the pad oxide layer or between a second position of the first charge trap layer and a second position of the second charge trap layer through the pad oxide layer.

REFERENCES:
patent: 4122543 (1978-10-01), Bert et al.
patent: 4717943 (1988-01-01), Wolf et al.
patent: 6324099 (2001-11-01), Iijima
patent: 6434053 (2002-08-01), Fujiwara
patent: 6934194 (2005-08-01), Takahashi et al.
patent: 7092291 (2006-08-01), Mori
patent: 7098505 (2006-08-01), Han et al.
patent: 7474562 (2009-01-01), Kuo et al.
patent: 7508718 (2009-03-01), Furnemont
patent: 7592666 (2009-09-01), Noguchi et al.
patent: 2005/0194633 (2005-09-01), Mori
patent: 2006/0146603 (2006-07-01), Kuo et al.
patent: 2006/0171209 (2006-08-01), Sim et al.
patent: 2007/0007583 (2007-01-01), Lee et al.
patent: 2007/0064468 (2007-03-01), Seol et al.
patent: 2008/0080238 (2008-04-01), Yuda
patent: 2008/0266960 (2008-10-01), Kuo
patent: 2009/0053871 (2009-02-01), Ahn
patent: 2009/0141563 (2009-06-01), Furnemont

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