Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-06-12
2009-11-24
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185200, C365S185190, C365S185240, C365S185070, C365S185090, C365S185120, C365S185220
Reexamination Certificate
active
07623374
ABSTRACT:
A non-volatile memory device and method thereof are provided. The example non-volatile memory device may include a plurality of main cells, each of the plurality of main cells arranged at first intersection regions between one of a plurality of word lines and one of a plurality of main bit line pairs and a plurality of flag cells, each of the plurality of flag cells arranged at second intersection regions between one of the plurality of word lines and a plurality of flag bit line pairs, each of the plurality of flag cells configured to store page information in a manner such that page information associated with main cells corresponding to one of the main bit line pairs is stored in flag cells corresponding to more than one of the flag bit line pairs.
REFERENCES:
patent: 5923587 (1999-07-01), Choi
patent: 6075734 (2000-06-01), Jang
patent: 6122188 (2000-09-01), Kim et al.
patent: 6807095 (2004-10-01), Chen et al.
patent: 6925004 (2005-08-01), Shibata et al.
patent: 7450421 (2008-11-01), Mokhlesi et al.
patent: 2007/0103978 (2007-05-01), Conley et al.
patent: 2001-043143 (2001-02-01), None
patent: 2004-192789 (2004-07-01), None
patent: 10-2000-0018838 (2000-04-01), None
patent: 10-2001-0005149 (2001-01-01), None
patent: 10-2002-0081925 (2002-10-01), None
patent: 10-2003-0011248 (2003-02-01), None
patent: 10-2004-0048344 (2004-06-01), None
Harness & Dickey & Pierce P.L.C.
Hidalgo Fernando N
Ho Hoai V
Samsung Electronics Co,. Ltd.
LandOfFree
Non-volatile memory devices and methods of programming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory devices and methods of programming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory devices and methods of programming the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4116659