Non-volatile memory devices and methods of operating the same

Details Non-volatile memory devices and methods of operating the same Non-volatile memory devices and methods of operating the same

2007-12-27

2010-10-12

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C257S315000, C257S319000, C257S314000

Reexamination Certificate

active

07813180

ABSTRACT:
Example embodiment non-volatile memory devices may be capable of increased integration and reliability and may provide example methods of operating non-volatile memory devices. Example embodiment non-volatile memory devices may include a first control gate electrode on a semiconductor substrate. A first charge storing layer may be between the semiconductor substrate and the first control gate electrode. A source region may be defined in the semiconductor substrate at one side of the first control gate electrode. A first auxiliary gate electrode may be at the other side of the first control gate electrode and may be recessed into the semiconductor substrate. A first drain region may be defined in the semiconductor substrate at one side of the first auxiliary gate electrode opposite to the first control gate electrode. A bit line may be connected to the first drain region.

REFERENCES:
patent: 6936887 (2005-08-01), Harari et al.
patent: 7196370 (2007-03-01), Kai et al.
patent: 7491998 (2009-02-01), Chang et al.
patent: 7579247 (2009-08-01), Harari et al.

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