Non-volatile memory devices and methods of fabricating the same

Details Non-volatile memory devices and methods of fabricating the same Non-volatile memory devices and methods of fabricating the same

2006-12-26

2006-12-26

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S411000, C257SE29309

Reexamination Certificate

active

07154143

ABSTRACT:
Non-volatile memory devices and methods of fabricating the same are disclosed. A disclosed non-volatile memory device includes: a tunnel oxide layer formed on a semiconductor substrate and having an energy bandgap; a storage oxide layer formed on the tunnel oxide layer and having an energy bandgap which is smaller than the energy bandgap of the tunnel oxide layer; a block oxide layer formed on the storage oxide layer and having an energy bandgap greater than the energy bandgap of the storage oxide layer; and a gate formed on the block oxide layer.

REFERENCES:
patent: 5600166 (1997-02-01), Clementi et al.
patent: 6413820 (2002-07-01), Bui
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 2003/0047755 (2003-03-01), Lee et al.
patent: 10-2003-0002298 (2003-01-01), None
patent: 10-2003-0081898 (2003-10-01), None

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