Non-volatile memory devices and method thereof

Details Non-volatile memory devices and method thereof Non-volatile memory devices and method thereof

2006-07-21

2008-10-14

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S063000, C365S105000

Reexamination Certificate

active

07436704

ABSTRACT:
Non-volatile memory devices and a method thereof are provided. A non-volatile memory device according to an example embodiment of the present invention may include a first transistor including a source, a drain, and a control gate, a first storage node coupled to the first transistor, the first storage node configured to store information in a first manner, a first diode having a first end connected to the source of the transistor, the first diode configured to rectify a flow of current from the source of the transistor and a second storage node connected to a second end of the first diode, the second storage node configured to store information in a second manner. Another non-volatile memory device according to another example embodiment of the present invention may include a semiconductor substrate having a first conductivity type including an active region defined by a device isolating layer, a source region and a drain region formed by doping an impurity having a second conductivity type in the active region, a control gate electrode insulated from the active region, the control gate electrode extending across the active region disposed between the source region and the drain region, a first storage node layer interposed between the active region and the control gate electrode configured to store information in a first manner, a second storage node layer disposed on the source region configured to store information in a second manner and a diode interposed between the source region and the second storage node layer to rectify a flow of current to the source region. The example method may be directed to obtaining a higher storage capacity per cell area in either of the above-described example non-volatile memory devices.

REFERENCES:
patent: 5247206 (1993-09-01), Castro
patent: 6635532 (2003-10-01), Song et al.
patent: 2004/0160825 (2004-08-01), Bhattacharyya
patent: WO 96/41381 (1996-12-01), None

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