Non-volatile memory device with conductive sidewall spacer...

Details Non-volatile memory device with conductive sidewall spacer... Non-volatile memory device with conductive sidewall spacer...

2007-04-30

2010-02-23

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S301000, C257SE21196, C257SE21636, C257SE21438

Reexamination Certificate

active

07667253

ABSTRACT:
The present invention relates to a non-volatile memory device having conductive sidewall spacers and a method for fabricating the same. The non-volatile memory device includes: a substrate; a gate insulation layer formed on the substrate; a gate structure formed on the gate insulation layer; a pair of sidewall spacers formed on sidewalls of the gate structure; a pair of conductive sidewall spacers for trapping/detrapping charges formed on the pair of sidewall spacers; a pair of lightly doped drain regions formed in the substrate disposed beneath the sidewalls of the gate structure; and a pair of source/drain regions formed in the substrate disposed beneath edge portions of the pair of conductive sidewall spacers.

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German Office Action issued in German Patent Application No. DE 10 2004 063 690.7-33, dated Oct. 7, 2008.

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