Non-volatile memory device with buried control gate and...

Details Non-volatile memory device with buried control gate and... Non-volatile memory device with buried control gate and...

2008-09-02

2008-09-02

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE27078

Reexamination Certificate

active

11248691

ABSTRACT:
In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.

REFERENCES:
patent: 4796228 (1989-01-01), Baglee
patent: 2002/0071315 (2002-06-01), Hsu et al.
patent: 2003-188289 (2003-07-01), None
patent: 10-2004-0063331 (2004-07-01), None

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