Non-volatile memory device with a polarizable layer

Details Non-volatile memory device with a polarizable layer Non-volatile memory device with a polarizable layer

2006-09-26

2006-09-26

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S446000, C257S505000, C257S524000, C438S295000, C438S404000, C438S407000, C438S517000

Reexamination Certificate

active

07112850

ABSTRACT:
This invention concerns a non-volatile memory device with a polarizable layer. The apparatus concerns a substrate, a buried oxide layer within the substrate, and a polarizable layer within the substrate. The polarizable layer is formed in a buried oxide layer of a silicon-on-insulator substrate for the fabrication of non-volatile memory. The process of creating the polarizable layer comprises implanting, through the active silicon layer, Si ions into the buried oxide layer at an ion implantation energy selected so that the implanted ion has its peak concentration between 5–50 nm from the silicon/buried oxide interface. The implantation step can occur while externally heating the silicon-on-insulator substrate at a temperature between 25–300 degrees Celsius. An annealing step may be completed to repair any damage the implantation may have created in the silicon-on-insulator substrate.

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P.J. McMarr,“SOI Non-volatile Memory” Proceedings Non-Volatile Memory Technology, Syp-2000, pp. 15-16 Nov. 2000.

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