Non-volatile memory device utilizing dueterated materials

Details Non-volatile memory device utilizing dueterated materials Non-volatile memory device utilizing dueterated materials

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S065000, C365S145000, C365S149000, C438S003000

Reexamination Certificate

active

06841818

ABSTRACT:
In a non-volatile memory device that includes an electrically polarizable dielectric memory material with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material includes one or more polymers, at least one of these polymers is a deuterated polymer.

REFERENCES:
patent: 3303177 (1967-02-01), Natta et al.
patent: 5307311 (1994-04-01), Sliwa, Jr.
patent: 6449184 (2002-09-01), Kato et al.
patent: WO 9912170 (1999-03-01), None
Patent Abstracts of Japan—Publication No. 61048983 A dated Oct. 3, 1986.
“Ultrafast Nonvolatile Ferroelectric Information Storage Data” IBM Technical Disclosure Bulletin, vol. 37 No. 11 Nov. 1994 pp. 421-424.
“Investigation of Switching Characteristics of Vinylidene Fluoride/Trifluoroethylene Copolymers in Relation to Their Structures”, Y. Tajitsu, et al., Japanese Journal of Applied Physics, vol. 26, No. 4, Apr. 1987, pp. 554-560.
“Effects of Repeated Polarization Reversal on Polarization Properties in Vinylidene Fluoride Trifluorocthylene Copolymers” M. Date, et al, 1994 IEEE, pp. 668-673.
“Polarisation and Dielectric Properties of Fatigued Ferroelectric Polymer Films” L. L. Guy, et al., 10thInternational Symposium on Electrets, 1999 pp. 197-200.
Ferroelectric Properties of Form I Perdeuteriated Poly (vinylidene fluoride), Takase, et al. American chemical Society, 1987, vol. 20 pp. 2318-2320.
“Polymerization of Vinylidene-dsFluoride”, R.E. Cais, et al, Macromolecules, 1984, vol. 17, No. 9, pp. 1887-1889.
International Search Report dated Dec. 9, 2002 for International Appln. No. PCT/NO 02/00299.

Affiliated with

Also associated with

Rating

Non-volatile memory device utilizing dueterated materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device utilizing dueterated materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device utilizing dueterated materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3371883