Non-volatile memory device incorporating a dual channel structur

Details Non-volatile memory device incorporating a dual channel structur Non-volatile memory device incorporating a dual channel structur

1997-12-05

1999-12-07

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257326, 438263, H01L 29788, H01L 29792

Patent

active

059988290

ABSTRACT:
A non-volatile memory device and a method of fabricating the same are disclosed. The non-volatile memory device includes a semiconductor substrate having a first conductive type, a plurality of first, second and third impurity regions having a second conductive type in the substrate, a plurality of first insulating layer only on the substrate between the second and third impurity regions, a second insulating layer on the substrate except on the first insulating layer formed, a plurality of floating gate on the first and second insulating layers, a plurality of dielectric layer on the floating gate, a plurality of control gate on the dielectric layer.

REFERENCES:
patent: 5047362 (1991-09-01), Bergemont
patent: 5633518 (1997-05-01), Broze
patent: 5648289 (1997-07-01), Park
patent: 5793673 (1998-08-01), Pio et al.
Kume et al., "A 1.28 .mu.m.sup.2 Contactless Memory Cell Technology for a 3V-Only 64Mbit EEPROM" IEDM Technical Digest, International Electron Devices Meeting 1992, pp. 24.7.1-24.7.3.

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