Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-02-20
2011-11-01
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S233190
Reexamination Certificate
active
08050087
ABSTRACT:
Provided are a semiconductor device having a block state confirmation cell that may store information indicating the number of data bits written to a plurality of memory cells, a method of reading memory data based on the number of the data bits written, and/or a memory programming method of storing the information indicating the number of the data bits written. The semiconductor device may include one or more memory blocks and a controller. Each of the memory blocks may include a plurality of memory cells each storing data, and a block state confirmation cell storing information indicating the number of data bits written to the memory cells. The controller may read the data bits from the memory blocks based on the number of data bits, which is indicated in the information in the block state confirmation cell.
REFERENCES:
patent: 6297988 (2001-10-01), Parker et al.
patent: 6535419 (2003-03-01), Parker et al.
patent: 7433246 (2008-10-01), Lee
patent: 7586789 (2009-09-01), Hsieh et al.
patent: 2006/0069851 (2006-03-01), Chung et al.
Cho Kyoung-lae
Hyun Jae-woong
Kwon Kee-won
Lee Seung-hoon
Park Ju-hee
Harness Dickey & Pierce PLC
Nguyen Van-Thu
Samsung Electronics Co,. Ltd.
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