Non-volatile memory device having toggle cell

Details Non-volatile memory device having toggle cell Non-volatile memory device having toggle cell

2008-05-06

2008-05-06

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07369429

ABSTRACT:
A tunneling magneto-resistance element is arranged on an upper layer side of a digit line. The tunneling magneto-resistance element is electrically coupled to a source/drain region of an access transistor through a strap and a contact hole. A bit line is electrically coupled to the tunneling magneto-resistance element, and arranged on the upper layer side of the tunneling magneto-resistance element. A plurality of tunneling magneto-resistance elements share one access transistor, so that a non-volatile memory device achieving low area penalty and higher integration can be implemented.

REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6744663 (2004-06-01), Garni et al.
patent: 7158407 (2007-01-01), Rizzo et al.
patent: 2001-357666 (2001-12-01), None
Najas, J., et al. “A 4Mb 0.18 μm 1T1MTJ Toggle MRAM Memory” ISSCC2004, Session 2, pp. 22-23.

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