Non-volatile memory device having threshold switching...

Details Non-volatile memory device having threshold switching... Non-volatile memory device having threshold switching...

2011-05-03

2011-05-03

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C438S381000

Reexamination Certificate

active

07935952

ABSTRACT:
Provided are a non-volatile memory device having a threshold switching resistor, a memory array including the non-volatile memory device, and methods of manufacturing the same. A non-volatile memory device having a threshold switching resistor may include a first resistor having threshold switching characteristics, an intermediate electrode on the first resistor, and a second resistor having at least two resistance characteristics on the intermediate electrode.

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patent: 7345907 (2008-03-01), Scheuerlein
patent: 7426128 (2008-09-01), Scheuerlein
patent: 7433222 (2008-10-01), Hosoi et al.
patent: 7743488 (2010-06-01), Tamai et al.
patent: 2009/0039335 (2009-02-01), Terao et al.

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