Non-volatile memory device having ferromagnetic and piezoelectri

Details Non-volatile memory device having ferromagnetic and piezoelectri Non-volatile memory device having ferromagnetic and piezoelectri

1997-02-10

1998-02-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257207, 257211, 365145, H01L 27105, G11C 1122

Patent

active

057172358

ABSTRACT:
A composition of materials having ferromagnetic, piezoelectric, and electro-optical. properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.

REFERENCES:
patent: 3579208 (1971-05-01), Bartlett
patent: 3585610 (1971-06-01), Bartlett
patent: 3599185 (1971-08-01), Bartlett
patent: 3798619 (1974-03-01), Samofalov et al.
patent: 5060191 (1991-10-01), Nagasaki et al.

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