Non-volatile memory device having controlled bulk voltage...

Details Non-volatile memory device having controlled bulk voltage... Non-volatile memory device having controlled bulk voltage...

2007-02-20

2007-02-20

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

C365S185270, C365S185180

Reexamination Certificate

active

11133347

ABSTRACT:
Disclosed is a non-volatile memory device and a method of programming the same. The non-volatile memory device is programmed by applying a wordline voltage, a bitline voltage, and a bulk voltage to memory cells within the device. During a programming operation for the device, the bulk voltage is generated by a first pump. However, where the bulk voltage exceeds a predetermined detection voltage, a second pump is further activated in order to lower the bulk voltage.

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