Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2002-10-09
2004-03-30
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S323000, C257S408000, C257S409000
Reexamination Certificate
active
06713812
ABSTRACT:
FIELD OF THE INVENTION
This invention relates generally to semiconductor devices, and more specifically, to semiconductor devices for use in memory cells.
BACKGROUND OF THE INVENTION
In SONOS (silicon-oxide-nitride-oxide-silicon) based non-volatile memory (NVM) cells, hot-carrier electron injection (HCI) into the nitride may be used to program a memory cell having a high threshold voltage (Vt) state and a low Vt state. Efficient HCI programming requires high channel region doping and a sharp drain junction; however, read disturb is aggravated by having high channel region doping. That is, the repeated reading of a memory cell in the low Vt state continuously increases the Vt of the memory cell. The Vt may increase to a point where the state of the memory cell may change from a low Vt state to a high Vt state, thus resulting in a reliability failure of the memory cell. Therefore, a need exists for a memory cell with increased reliability during repeated reads.
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Chindalore Gowrishankar L.
Hoefler Alexander B.
Ingersoll Paul A.
Swift Craig T.
Chiu Joanna G.
Clingan, Jr. James L.
Ngo Ngan V.
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