Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-12
1998-09-08
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257321, H01L 213205, H01L 2358
Patent
active
058050132
ABSTRACT:
A non-volatile memory device is fabricated having enhanced charge retention capability. Enhanced charge retention is achieved upon the floating gate of the non-volatile memory device. The floating gate can be configured as a stacked or non-stacked pair of polysilicon conductors. In either instance, negative charge programmed upon the floating gate is retained by reducing the presence of positively charged atoms within dielectrics overlying the floating gate conductor. Moreover, diffusion avenues of the positively charged hydrogen are reduced by maintaining a prevalence of relatively strong bond locations within the overlying dielectric layers. Thus, origination of positively charged atoms such as hydrogen from those bonds is substantially prevented by processing the hydrogen-containing dielectrics at relatively low temperatures and further processing any subsequent dielectrics and/or conductors overlying the floating gate at relatively low temperatures. Suitable processing temperatures (dielectric deposition and metal sintering temperatures) are temperatures less than 380.degree. C.
REFERENCES:
patent: 4422161 (1983-12-01), Kressel et al.
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 4958321 (1990-09-01), Chang
patent: 4999812 (1991-03-01), Amin
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5101250 (1992-03-01), Arima et al.
patent: 5120671 (1992-06-01), Tang et al.
patent: 5120672 (1992-06-01), Mitchell et al.
patent: 5147811 (1992-09-01), Sakagami
patent: 5149666 (1992-09-01), Mikata et al.
patent: 5151375 (1992-09-01), Kazerounian et al.
patent: 5208175 (1993-05-01), Choi et al.
patent: 5279981 (1994-01-01), Fukatsu et al.
patent: 5279982 (1994-01-01), Crotti
patent: 5284786 (1994-02-01), Sethi
patent: 5335198 (1994-08-01), Van Buskirk et al.
patent: 5364664 (1994-11-01), Tsubouchi et al.
patent: 5462898 (1995-10-01), Chen et al.
patent: 5508543 (1996-04-01), Hartstein et al.
patent: 5545906 (1996-08-01), Ogura et al.
patent: 5625212 (1997-04-01), Fukumoto
patent: 5641989 (1997-06-01), Tomioka
patent: 5644158 (1997-07-01), Fujii et al.
patent: 5652447 (1997-07-01), Chen et al.
Hisamune, "A 3.6 Fm.sup.2 Memory Cell Structure for 16MB EPROMS", IEEE, 1989, pp. 25.2.1-25.2.4.
Bellezza, "A New Self-Aligned Field Oxide Cell for Multimegabit EPROMS", IEEE, 1989, pp. 25.1.1-25.1.4.
Woo, "A Novel Memory Cell Using Flash Array Contactless EPROM (FACE) Technology", IEEE, 1990, pp. 5.1.-5.1.4.
Robinson, "Endurance Brightens the Future of Flash: Flash memory as a viable mass-storage alternative", Technnological Horizons, Nov., (Chilton Company, 1988), pp. 167-169.
Lai, "Comparison and Trends in Today's dominant E.sup.2 Technologies", IEDM Tech. Dig., 1986, pp. 580-583.
Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, (John Wiley & Sons, 1983), pp. 465-470.
Wolf, Silicon Processing for the VLSI ERA, vol. 1: Process Technology, (Lattice Press, 1986), pp. 198-201.
Patent Abstract of Japan, Publication Number 6-1170067, Publication Date Jul. 31, 1986.
Niwano, M., et al., "Ultraviolet-Induced Deposition of SI02 Film From Tetraethoxysilane Spin-Coated on SI", Journal of the Electrochemical Society, vol. 141, No. 6, Jun. 1, 1994, pp. 1556-1561.
Hieber, K., et al., "Chemical Vapour Deposition of Oxide and Metal Films for VLSI Applications," vol. 181, No. 1, Dec. 10, 1989, pp. 75-84.
Ueno, T., et al., "Deposition of Low Hydrogen Content Silicon Nitride Film Using High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor," vol. 31, No. 12A, Part 01, Dec. 1, 1992, pp. 3972-3975.
Wolf, "Silicon Processing for the VLSI ERA," vol. 1, 1986, pp. 182-195.
Wolf, "Silicon Processing for the VLSI ERA," vol. 2, 1990, pp. 273-276, 361-363.
Fulford Jr. H. Jim
Ghneim Said N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Monin Donald
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